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NXP Semiconductors
Double ESD protection diodes
in SOT23 package
FEATURES
Product data sheet
PESDxS2UAT series
QUICK REFERENCE DATA
? Unidirectional ESD protection of up to two lines
? Common-cathode configuration
? Max. peak pulse power: P pp = 330 W at t p = 8/20 μ s
SYMBOL
V RWM
PARAMETER
reverse stand-off
voltage
VALUE
3.3, 5, 12, 15
and 24
UNIT
V
? Low clamping voltage: V (CL)R = 20 V at I pp = 18 A
? Ultra-low reverse leakage current: I RM < 700 nA
? ESD protection > 30 kV
? IEC 61000-4-2; level 4 (ESD)
C d
diode capacitance
V R = 0 V;
f = 1 MHz
number of
protected lines
207, 152, 38, 32 pF
and 23
2
? IEC 61000-4-5 (surge); I pp = 18 A at t p = 8/20 μ s.
PINNING
APPLICATIONS
? Computers and peripherals
? Communication systems
? Audio and video equipment
? Data lines
? CAN bus protection.
DESCRIPTION
Unidirectional double ESD protection diodes in common
cathode configuration in the SOT23 plastic package.
Designed to protect up to two transmission or data lines
PIN
1
2
3
1
DESCRIPTION
anode 1
anode 2
common cathode
against damage from ElectroStatic Discharge (ESD) and
other transients.
2
3
1
2
3
MARKING
TYPE NUMBER
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
MARKING CODE (1)
*7A
*7B
*7C
001aaa401
sym002
PESD15VS2UAT
PESD24VS2UAT
Note
1. * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
2004 Feb 18
*7D
*7E
2
Fig.1 Simplified outline (SOT23) and symbol.
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